Numerical simulation and characterization of trapping noise in InGaP-GaAs heterojunctions devices at high injection
Identifieur interne : 000818 ( Main/Repository ); précédent : 000817; suivant : 000819Numerical simulation and characterization of trapping noise in InGaP-GaAs heterojunctions devices at high injection
Auteurs : RBID : Pascal:13-0142304Descripteurs français
- Pascal (Inist)
- Simulation numérique, Hétérojonction, Simulateur, Dispositif semiconducteur, Comportement parasite, Conception assistée, Convertisseur NA, Approche déterministe, Progiciel, Fonction Green, Protection environnement, Composant électronique, Etude comparative, Bruit basse fréquence, Phosphure de gallium, Phosphure d'indium, Composé ternaire, Conception circuit, InGaP.
- Wicri :
- concept : Composant électronique.
English descriptors
- KwdEn :
- 1/f noise, Circuit design, Comparative study, Computer aided design, DA converter, Deterministic approach, Electronic component, Environmental protection, Gallium phosphide, Green function, Heterojunction, Indium phosphide, Numerical simulation, Parasitic behavior, Semiconductor device, Simulator, Software package, Ternary compound.
Abstract
Commercially available simulators present considerable advantages in performing accurate DC, AC and transient simulations of semiconductor devices, including many fundamental and parasitic effects which are not generally taken into account in house-made simulators. Nevertheless, while the TCAD simulators of the public domain we have tested give accurate results for the simulation of diffusion noise, none of the tested simulators perform trap-assisted GR noise accurately. In order to overcome the aforementioned problem we propose a robust solution to accurately simulate GR noise due to traps. It is based on numerical processing of the output data of one of the simulators available in the public-domain, namely SENTAURUS (from Synopsys). We have linked together, through a dedicated Data Access Component (DAC), the deterministic output data available from SENTAURUS and a powerful, customizable post-processing tool developed on the mathematical SCILAB software package. Thus, robust simulations of GR noise in semiconductor devices can be performed by using GR Langevin sources associated to the scalar Green functions responses of the device. Our method takes advantage of the accuracy of the deterministic simulations of electronic devices obtained with SENTAURUS. A Comparison between 2-D simulations and measurements of low frequency noise on InGaP-GaAs heterojunctions, at low as well as high injection levels, demonstrates the validity of the proposed simulation tool.
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No. 7252 7, rue Jules Vallès</s1><s2>19100 Brive</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Limousin</region><settlement type="city">Brive</settlement></placeName></affiliation></author><author><name sortKey="Jacquet, Jean Claude" uniqKey="Jacquet J">Jean-Claude Jacquet</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>III-V Lab, Route de Nozay</s1><s2>91461 Marcoussis</s2><s3>FRA</s3><sZ>3 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Marcoussis</settlement></placeName></affiliation></author><author><name sortKey="Prigent, Michel" uniqKey="Prigent M">Michel Prigent</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>University of Limoges, Xlim, U.M.R. C.N.R.S. No. 7252 7, rue Jules Vallès</s1><s2>19100 Brive</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Limousin</region><settlement type="city">Brive</settlement></placeName></affiliation></author><author><name sortKey="Floriot, Didier" uniqKey="Floriot D">Didier Floriot</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>UMS, Route Départementale 128, BP 46</s1><s2>91401 Orsay</s2><s3>FRA</s3><sZ>5 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Orsay</settlement></placeName></affiliation></author><author><name sortKey="Delage, Sylvain" uniqKey="Delage S">Sylvain Delage</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>III-V Lab, Route de Nozay</s1><s2>91461 Marcoussis</s2><s3>FRA</s3><sZ>3 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Marcoussis</settlement></placeName></affiliation></author><author><name sortKey="Obregon, Juan" uniqKey="Obregon J">Juan Obregon</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>University of Limoges, Xlim, U.M.R. C.N.R.S. No. 7252 7, rue Jules Vallès</s1><s2>19100 Brive</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Limousin</region><settlement type="city">Brive</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0142304</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0142304 INIST</idno><idno type="RBID">Pascal:13-0142304</idno><idno type="wicri:Area/Main/Corpus">000F89</idno><idno type="wicri:Area/Main/Repository">000818</idno></publicationStmt><seriesStmt><idno type="ISSN">0038-1101</idno><title level="j" type="abbreviated">Solid-state electron.</title><title level="j" type="main">Solid-state electronics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>1/f noise</term><term>Circuit design</term><term>Comparative study</term><term>Computer aided design</term><term>DA converter</term><term>Deterministic approach</term><term>Electronic component</term><term>Environmental protection</term><term>Gallium phosphide</term><term>Green function</term><term>Heterojunction</term><term>Indium phosphide</term><term>Numerical simulation</term><term>Parasitic behavior</term><term>Semiconductor device</term><term>Simulator</term><term>Software package</term><term>Ternary compound</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Simulation numérique</term><term>Hétérojonction</term><term>Simulateur</term><term>Dispositif semiconducteur</term><term>Comportement parasite</term><term>Conception assistée</term><term>Convertisseur NA</term><term>Approche déterministe</term><term>Progiciel</term><term>Fonction Green</term><term>Protection environnement</term><term>Composant électronique</term><term>Etude comparative</term><term>Bruit basse fréquence</term><term>Phosphure de gallium</term><term>Phosphure d'indium</term><term>Composé ternaire</term><term>Conception circuit</term><term>InGaP</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Composant électronique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Commercially available simulators present considerable advantages in performing accurate DC, AC and transient simulations of semiconductor devices, including many fundamental and parasitic effects which are not generally taken into account in house-made simulators. Nevertheless, while the TCAD simulators of the public domain we have tested give accurate results for the simulation of diffusion noise, none of the tested simulators perform trap-assisted GR noise accurately. In order to overcome the aforementioned problem we propose a robust solution to accurately simulate GR noise due to traps. It is based on numerical processing of the output data of one of the simulators available in the public-domain, namely SENTAURUS (from Synopsys). We have linked together, through a dedicated Data Access Component (DAC), the deterministic output data available from SENTAURUS and a powerful, customizable post-processing tool developed on the mathematical SCILAB software package. Thus, robust simulations of GR noise in semiconductor devices can be performed by using GR Langevin sources associated to the scalar Green functions responses of the device. Our method takes advantage of the accuracy of the deterministic simulations of electronic devices obtained with SENTAURUS. A Comparison between 2-D simulations and measurements of low frequency noise on InGaP-GaAs heterojunctions, at low as well as high injection levels, demonstrates the validity of the proposed simulation tool.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0038-1101</s0></fA01><fA03 i2="1"><s0>Solid-state electron.</s0></fA03><fA05><s2>81</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Numerical simulation and characterization of trapping noise in InGaP-GaAs heterojunctions devices at high injection</s1></fA08><fA11 i1="01" i2="1"><s1>NALLATAMBY (Jean-Christophe)</s1></fA11><fA11 i1="02" i2="1"><s1>ABDELHADI (Khaled)</s1></fA11><fA11 i1="03" i2="1"><s1>JACQUET (Jean-Claude)</s1></fA11><fA11 i1="04" i2="1"><s1>PRIGENT (Michel)</s1></fA11><fA11 i1="05" i2="1"><s1>FLORIOT (Didier)</s1></fA11><fA11 i1="06" i2="1"><s1>DELAGE (Sylvain)</s1></fA11><fA11 i1="07" i2="1"><s1>OBREGON (Juan)</s1></fA11><fA14 i1="01"><s1>University of Limoges, Xlim, U.M.R. C.N.R.S. No. 7252 7, rue Jules Vallès</s1><s2>19100 Brive</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="02"><s1>III-V Lab, Route de Nozay</s1><s2>91461 Marcoussis</s2><s3>FRA</s3><sZ>3 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="03"><s1>UMS, Route Départementale 128, BP 46</s1><s2>91401 Orsay</s2><s3>FRA</s3><sZ>5 aut.</sZ></fA14><fA20><s1>41-50</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>2888</s2><s5>354000500605660090</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>18 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0142304</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Solid-state electronics</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>Commercially available simulators present considerable advantages in performing accurate DC, AC and transient simulations of semiconductor devices, including many fundamental and parasitic effects which are not generally taken into account in house-made simulators. Nevertheless, while the TCAD simulators of the public domain we have tested give accurate results for the simulation of diffusion noise, none of the tested simulators perform trap-assisted GR noise accurately. In order to overcome the aforementioned problem we propose a robust solution to accurately simulate GR noise due to traps. It is based on numerical processing of the output data of one of the simulators available in the public-domain, namely SENTAURUS (from Synopsys). We have linked together, through a dedicated Data Access Component (DAC), the deterministic output data available from SENTAURUS and a powerful, customizable post-processing tool developed on the mathematical SCILAB software package. Thus, robust simulations of GR noise in semiconductor devices can be performed by using GR Langevin sources associated to the scalar Green functions responses of the device. Our method takes advantage of the accuracy of the deterministic simulations of electronic devices obtained with SENTAURUS. A Comparison between 2-D simulations and measurements of low frequency noise on InGaP-GaAs heterojunctions, at low as well as high injection levels, demonstrates the validity of the proposed simulation tool.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F02</s0></fC02><fC02 i1="02" i2="X"><s0>001D03G02A4</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Simulation numérique</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Numerical simulation</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Simulación numérica</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Hétérojonction</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Heterojunction</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Heterounión</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Simulateur</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Simulator</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Simulador</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Dispositif semiconducteur</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Semiconductor device</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Dispositivo semiconductor</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Comportement parasite</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Parasitic behavior</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Conducta parásito</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Conception assistée</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Computer aided design</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Concepción asistida</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Convertisseur NA</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>DA converter</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Convertidor NA</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Approche déterministe</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Deterministic approach</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Enfoque determinista</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Progiciel</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Software package</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Paquete programa</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Fonction Green</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Green function</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Función Green</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Protection environnement</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Environmental protection</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Protección medio ambiente</s0><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Composant électronique</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Electronic component</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Componente electrónico</s0><s5>12</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Etude comparative</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Comparative study</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Estudio comparativo</s0><s5>13</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Bruit basse fréquence</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>1/f noise</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Ruido baja frecuencia</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Phosphure de gallium</s0><s5>22</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Gallium phosphide</s0><s5>22</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Galio fosfuro</s0><s5>22</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Phosphure d'indium</s0><s5>23</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Indium phosphide</s0><s5>23</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Indio fosfuro</s0><s5>23</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Composé ternaire</s0><s5>24</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Ternary compound</s0><s5>24</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Compuesto ternario</s0><s5>24</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Conception circuit</s0><s5>46</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Circuit design</s0><s5>46</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Diseño circuito</s0><s5>46</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>InGaP</s0><s4>INC</s4><s5>82</s5></fC03><fC07 i1="01" i2="X" l="FRE"><s0>Composé III-V</s0><s5>15</s5></fC07><fC07 i1="01" i2="X" l="ENG"><s0>III-V compound</s0><s5>15</s5></fC07><fC07 i1="01" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>15</s5></fC07><fN21><s1>112</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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